PixelSensor Multispectral Photodiodes
micro-patterned filters | sensors | cameras
Integrated wavelength-selective detectors for compact multispectral devices PixelSensor™ multispectral photodiodes open
Optical filters integrated on silicon
up new possibilities for application-specific
photodiodes can be customized to fit targeted
sensors. PIXELTEQ’s exclusive micro-patterned
VIS-NIR bands (400-1000nm) for optimal
optical filter technology shrinks spectral
performance in your application. In a typical
sensors and simplifies optical device design,
package the photodiodes are configured for
packing up to 8 spectral sensors into a 9mm
common cathode operation, providing low
(3/8”) square footprint. Precision narrowband
noise and fast temporal response. PIXELTEQ
spectral filters deliver improved sensitivity and
offers expert design assistance for tailored
contrast for multispectral applications from
OEM spectral sensors from rapid prototype
portable fluorescence detection to scientific
through scalable volume production.
instrumentation.
pixelteq.com
Benefits
Spectral Response
• 8-band array in 9x9mm footprint • Simplified optics for miniaturized devices • Narrowband VIS + NIR selectivity • Standard & custom spectral bands • OEM Versions available Applications • Biomedical instrumentation • Color meters & monitors • Industrial sorting & sensing • Portable optical sensors • OEM multispectral devices
8.89mm 5.46mm 1.27mm
Sensor
Dimensions
Spectral filters
Standard & custom spectral bands (50-100nm FWHM typical)
Dimensions
8.9 x 8.9 x 2.4mm (0.35” x 0.35” x 0.1”)
Spectral range
VIS-NIR (400-1000nm), Si photodiode
Active Area
1.0 x 0.8mm (0.04” x 0.033”)
Package
LCC package (up to 8 spectral bands)
Volume
<200mm3 (0.015in3)
1.0mm
Other options available on request
Performance Characteristics Characteristic
Symbol
Test
Min
Typical
Short circuit current
ISC
H = 100 fc, 2850K
1
2
Dark current
Id
Vr = 10V
2
Shunt resistance
Rsh
Vr = 10mV
100
Junction capacitance
Cj
Vr = 10V, f=1 MHz
1
Spectral range
^range
Spot scan
400
Breakdown voltage
Vbr
I = 10µA
30
100
V
Noise time
NEP
Vr = 10V @ λ = peak
30
100
V
Response time
t
RI = 50Ω, VR = 50V
6.0
Ns
Max
Units µA
30
nA MΩ
5
pF
1100
Nm
Absolute Maximum Rating Reverse voltage
Vbr
Operating temperature
To
-40
to
50
V
+80
˚C
Contact an Application Engineer to discuss your specific application. +1.303.273.9700 (americas) +31 263831707 (europe)
+86.10.5126.1868 (china) +91.22.6708.0420 (india)
[email protected] pixelteq.com
