Single-Nanowire Raman Microprobe Studies of Doping-, Temperature

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ARTICLE

Single-Nanowire Raman Microprobe Studies of Doping-, Temperature-, and Voltage-Induced Metal
Insulator Transitions of WxV1
xO2 Nanowires Luisa Whittaker,†,§ Tai-Lung Wu,‡,§ Adam Stabile,‡ G. Sambandamurthy,‡,* and Sarbajit Banerjee†,* †

Department of Chemistry and ‡Department of Physics, University at Buffalo, The State University of New York, Buffalo, New York 14260, United States. These authors contributed equally to this work.

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weaking the intricately entangled lattice, orbital, and spin degrees of freedom in strongly correlated electronic materials has emerged as a validated tool for discovery of regions of phase space characterized by exotic spin and transport behavior and for manifestation of physical phenomena characterized by unprecedented complexity.1
3 Scaling strongly correlated electronic materials to nanoscale dimensions, below the intrinsic domain size, represents a possible alternative for examining materials close to the single-domain limit.4 As a canonical example of a material exhibiting electronic instabilities, the metal
insulator transitions of VO2 have attracted much recent scrutiny.3
7 The impressive magnitude of the phase transition, its proximity to room temperature, and the intrinsic